Low-divergence, high-power, 980 nm, single-mode diode lasers with asymmetric epitaxial structure

被引：2

作者：

Gao, W ^{[1
]}

Xu, Z ^{[1
]}

Nelson, A ^{[1
]}

Luo, K ^{[1
]}

Wan, JZ ^{[1
]}

Yang, H ^{[1
]}

Cheng, L ^{[1
]}

Chin, AK ^{[1
]}

机构：

[1] Axcel Photon Inc, Marlborough, MA 01752 USA

来源：

APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS | 2002年 / 4905卷

关键词：

diode laser; pump laser; waveguide;

D O I：

10.1117/12.480997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ridge-waveguide, InGaAs/GaAlAs/GaAs, 980 nm, pump laser-diode emitting more than 600 mW of kink-free power and a FWHM divergence angle less than 22 degrees using an asymmetric-waveguide structure is presented. No catastrophic optical-damage was observed on p-up mounted devices up to a quasi-CW output power of 2 Watts where the power was limited by thermal effects.

引用

页码：154 / 156

页数：3