Synthesis of cubic and hexagonal boron nitrides by using Ni solvent under high pressure

被引：31

作者：

Kubota, Yoichi ^{[1
]}

Watanabe, Kenji ^{[1
]}

Taniguchi, Takashi ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 01期

关键词：

cBN; recrystallized hBN; high pressure; metal solvent; P-T diagram; wide band gap; CL; UV luminescence;

D O I：

10.1143/JJAP.46.311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reaction boundary between boron nitride (BN) and nickel (Ni) metal was studied at high pressures (HP) of 4.5-6 GPa in the high temperature (HT) 1300-1900 degrees C region. It can be seen that Ni dissolves BN followed by the precipitation of BN crystals under HP and HT. Full conversion from hexagonal BN (hBN) to cubic BN (cBN) took place above 6 GPa and 1700 degrees C while cBN started to crystallize from 5.5 GPa and 1500 degrees C. Near the reaction boundary in the cBN formed region, hBN also spontaneously recrystallized. Although crystallized cBN exhibited irregularity in shape, the recrystallized hBN exhibited crystalline facets and intrinsic optical characteristics. It was found that high quality hBN crystals can be synthesized in the Ni-BN system under HP and HT.

引用

页码：311 / 314

页数：4

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