Deep level transient spectroscopy (DLTS) of a poly(p-phenylene vinylene) Schottky diode

被引：45

作者：

Campbell, AJ

Bradley, DDC

Werner, E

Brütting, W

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Univ Bayreuth, Lehrstuhl Expt Phys 2, D-95440 Bayreuth, Germany

来源：

SYNTHETIC METALS | 2000年 / 111卷

基金：

英国工程与自然科学研究理事会;

关键词：

deep level transient spectroscopy; charge traps; polymers; poly(phenylene vinylene); electroluminescence; light emitting diodes;

D O I：

10.1016/S0379-6779(99)00446-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep level transient spectroscopy measurements have been carried out on ITO/poly(p-phenylenevinylene)/Al organic light emitting diodes that have a depletion region type Schottky barrier at the polymer/metal interface. The very long lived capacitance transients can be successfully described by the de-trapping of p-type majority carriers from a single energy trap level to a Gaussian distribution of transport states. The Gaussian width of 0.10 +/- 0.02 eV and trap depth of 0.75 +/- 0.05 eV are in excellent agreement with values measured from other unrelated experimental techniques. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：273 / 276

页数：4

共 10 条

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[2]

Borsenberger PM., 1998, ORGANIC PHOTORECEPTO

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