Spatially resolved investigations of the emission around 3.31 eV (A-line) from ZnO nanocrystals

被引：19

作者：

Kurbanov, S. S. ^{[1
,2
]}

Panin, G. N. ^{[1
,3
]}

Kang, T. W. ^{[1
]}

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Uzbek Acad Sci, Heat Phys Dept, Tashkent 700135, Uzbekistan

[3] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 21期

关键词：

annealing; cathodoluminescence; II-VI semiconductors; nanofabrication; nanostructured materials; photoluminescence; point defects; semiconductor growth; wide band gap semiconductors; zinc compounds; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; DEPOSITION; EXCITON; FILMS;

D O I：

10.1063/1.3264084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO nanocrystals grown by chemical solution deposition were studied by means of photoluminescence and cathodoluminescence spectroscopy. A postgrown annealing treatment significantly improved the UV emission efficiency and resulted in the clear appearance of a low temperature emission band around 3.31 eV (so-called A-line). Spatially and wavelength resolved cathodoluminescence measurements revealed a spotlike distribution of the A-line emission on a nanocrystal surface. It is found that there is a strong correlation between the emission around 3.31 eV and the specklike defects on the nanocrystal surface that appeared after annealing. The origin of the A-line and the specklike defects are discussed.

引用

页数：3

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