Nanopatterning with microdomains of block copolymers using reactive-ion etching selectivity

被引:78
作者
Asakawa, K [1 ]
Hiraoka, T [1 ]
机构
[1] Toshiba Co Ltd, Adv Mat & Devices Lab, Corp Res & Dev Ctr, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 10期
关键词
block copolymer; self-assembling; reactive-ion etching; dry-etching resistance;
D O I
10.1143/JJAP.41.6112
中图分类号
O59 [应用物理学];
学科分类号
摘要
Block copolymers are known to generate nanoscale microdomains by microphase separation. if they are annealed at a temperature lower than their order-disorder transition temperatures. We attempted to transfer the microdomains onto substrates by only using the reactive-ion etching (RIE) method, which is widely used in semiconductor Manufacturing processes. Block copolymers consisting of an aromatic polymer and an acrylic polymer were used since there is a large difference in the dry-etch resistance, in that only the acrylic polymer was selectively etched by RIE. Furthermore, nanometer-scale dot patterns can be easily obtained on the substrates by the continuous RIE process. Dot patterns of arbitrary diameters could be transferred to silicon wafers. glass substrates and so forth using these materials and processes.
引用
收藏
页码:6112 / 6118
页数:7
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