Theoretical scanning tunneling microscopy images of the As vacancy on the GaAs(110) surface - Comment

被引：8

作者：

Harper, J ^{[1
]}

Lengel, G ^{[1
]}

Allen, RE ^{[1
]}

Weimer, M ^{[1
]}

机构：

[1] LAB PHYS SCI, COLLEGE PK, MD 20740 USA

来源：

关键词：

D O I：

10.1103/PhysRevLett.79.3314

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3314 / 3314

页数：1

共 6 条

[1] CHARGE-STATE-DEPENDENT STRUCTURAL RELAXATION AROUND ANION VACANCIES ON INP(110) AND GAP(110) SURFACES
EBERT, P
URBAN, K
LAGALLY, MG
[J]. PHYSICAL REVIEW LETTERS, 1994, 72 (06) : 840 - 843
[2] Theoretical scanning tunneling microscopy images of the as vacancy on the GaAs(110) surface
Kim, H
Chelikowsky, JR
[J]. PHYSICAL REVIEW LETTERS, 1996, 77 (06) : 1063 - 1066
[3] GEOMETRY AND ELECTRONIC-STRUCTURE OF THE ARSENIC VACANCY ON GAAS(110)
LENGEL, G
WILKINS, R
BROWN, G
WEIMER, M
GRYKO, J
ALLEN, RE
[J]. PHYSICAL REVIEW LETTERS, 1994, 72 (06) : 836 - 839
[4] Charge injection and STM-induced vacancy migration on GaAs(110)
Lengel, G
Harper, J
Weimer, M
[J]. PHYSICAL REVIEW LETTERS, 1996, 76 (25) : 4725 - 4728
[5] STABILITY AND DYNAMICS OF SURFACE VACANCIES ON GAAS(110)
YI, JY
HA, JS
PARK, SJ
LEE, EH
[J]. PHYSICAL REVIEW B, 1995, 51 (16) : 11198 - 11200
[6] Structure of the As vacancies on GaAs(110) surfaces
Zhang, SB
Zunger, A
[J]. PHYSICAL REVIEW LETTERS, 1996, 77 (01) : 119 - 122