Study of diluted magnetic semiconductor: Co-doped ZnO

被引:683
作者
Lee, HJ
Jeong, SY [1 ]
Cho, CR
Park, CH
机构
[1] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[2] COMTECS Ltd, Adv Mat Res Lab, Taegu 704702, South Korea
[3] Korea Basic Sci Inst, Pusan 609735, South Korea
[4] Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea
关键词
D O I
10.1063/1.1517405
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the high-temperature ferromagnetism in Co-doped ZnO films fabricated by the sol-gel method above 350 K. The lattice constant of c axis of wurtzite Zn1-xCoxO follows Vergard's law for 0<x<0.25. For Zn1-xCoxO with xgreater than or equal to0.25, a secondary phase is detected. The Zn1-xCoxO exhibits ferromagnetic behavior with a Curie temperature higher than 350 K. By the results of x-ray photoelectron spectroscopy measurement, we assume that Co occupied the Zn site without changing the wurtzite structure. In the case of x=0.2, the coercive field measured by a magnetization-magnetic field hysteresis curve at 350 K was nearly 80 Oe. Additionally, we investigated the electric structure through first-principles pseudopotential plane-wave calculation. (C) 2002 American Institute of Physics.
引用
收藏
页码:4020 / 4022
页数:3
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