Effects of complex doping on microstructural and electrical properties of PZT ceramics

The influence of complex dopants including donor and acceptor ions on microstructure and electrical properties of PZT (Zr/Ti = 53/47) ceramics was investigated. The prepared PZT ceramics modified with complex soft dopants, La+3 and Nb(+5)supercript stop, showed that the piezoelectric properties were enhanced and stable with the compositional variations, which made it possible to establish the higher reliability and reproducibility of the piezoelectric performances. For 1.0 mol% La and 1.2 mol% Nb doped composition, the maximum value, k(P) = 0.66, was obtained. Unlike single element doping, the complex doping of both the donor and acceptor ions caused various compensation effects for the piezoelectric properties of the PZT ceramics. The improved piezoelectric properties, i.e., enhanced Q(m) with remaining higher k(p) , were obtained in the PZT composition complexly doped with La+3 and Fe+3. For 1.0 mol% La and 2.0 mol% Fe doped PZT composition, relatively high Q(m) and k(p) values of 580 and 0.53, respectively, were obtained. It was also shown that the PZT composition had the rather lowered dielectric constant, epsilon(r) = 800, and considerably low loss, tan delta = 0.003. By changing the dopants compositions, the properties can also be tailored over wider range.