Optimal basis sets for detailed Brillouin-zone integrations

被引:83
作者
Shirley, EL
机构
[1] Optical Technology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, Building 221
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 23期
关键词
D O I
10.1103/PhysRevB.54.16464
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A method is given to obtain optimal basis sets for certain electronic-structure calculations, starting with solutions of Schrodinger's equation at a few crystal momenta and finding periodic functions that best span the periodic parts or such wave functions at all momenta. This is done within a pseudopotential, plane-wave framework. The derived basis sets should be most helpful for modeling quantities such as optical properties of materials: they have enables the author to solve Schrodinger's equation at thousands of crystal momenta from 4 to 3500 times faster than did a basis set of plane waves. However, one still obtains reasonable wave functions expanded in the same plane-wave representation.
引用
收藏
页码:16464 / 16469
页数:6
相关论文
共 36 条
[1]   QUANTUM THEORY OF DIELECTRIC CONSTANT IN REAL SOLIDS [J].
ADLER, SL .
PHYSICAL REVIEW, 1962, 126 (02) :413-+
[2]   LINEAR METHODS IN BAND THEORY [J].
ANDERSEN, OK .
PHYSICAL REVIEW B, 1975, 12 (08) :3060-3083
[3]   ABINITIO CALCULATION OF THE MACROSCOPIC DIELECTRIC-CONSTANT IN SILICON [J].
BARONI, S ;
RESTA, R .
PHYSICAL REVIEW B, 1986, 33 (10) :7017-7021
[4]   QUASI-PARTICLE BAND-STRUCTURE OF BULK HEXAGONAL BORON-NITRIDE AND RELATED SYSTEMS [J].
BLASE, X ;
RUBIO, A ;
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW B, 1995, 51 (11) :6868-6875
[5]  
CARLISLE JA, UNPUB
[6]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[7]   SPECIAL POINTS IN BRILLOUIN ZONE [J].
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (12) :5747-5753
[8]  
Cohen M. L., 1988, Electronic Structure and Optical Properties of Semiconductors
[9]   SELF-ENERGY OPERATORS AND EXCHANGE-CORRELATION POTENTIALS IN SEMICONDUCTORS [J].
GODBY, RW ;
SCHLUTER, M ;
SHAM, LJ .
PHYSICAL REVIEW B, 1988, 37 (17) :10159-10175
[10]   ACCURATE EXCHANGE-CORRELATION POTENTIAL FOR SILICON AND ITS DISCONTINUITY ON ADDITION OF AN ELECTRON [J].
GODBY, RW ;
SCHLUTER, M ;
SHAM, LJ .
PHYSICAL REVIEW LETTERS, 1986, 56 (22) :2415-2418