Role of Coulomb interactions in semicore levels Ga d levels of GaX semiconductors: Implication on band offsets

被引:4
作者
Cherian, R. [1 ]
Mahadevan, P. [1 ]
Persson, C. [2 ]
机构
[1] SN Bose Natl Ctr Basic Sci, Dept Mat Sci, Kolkata 700098, India
[2] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
关键词
Semiconductors; Electronic band structure; ELECTRONIC-STRUCTURE; GW;
D O I
10.1016/j.ssc.2009.07.014
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The positions of the semicore Ga d levels in GaX semiconductors (X = N, P, and As) are underestimated in density functional calculations using either the local density approximation LIDA or the generalized gradient approximation GGA for the exchange functional. Correcting for this inaccuracy within LDA + U calculations with an on-site Coulumb interaction U on the semicore d-states results in a modest enhancement of the band gap. We show that this modest enhancement of the band-gap energy comes from the movement of the valence-band maximum alone, thus not affecting the conduction-band states. Further, the localization of the charge on Ga d states with U leads to a regulation of charge on Ga. This yields a shift of 1-2 eV of the core levels on the Ga atom while the anion core levels remain unchanged. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1810 / 1813
页数:4
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