Large-area high-resolution lithography and photoablation systems for microelectronics and optoelectronics fabrication

被引:30
作者
Jain, K [1 ]
Zemel, M [1 ]
Klosner, M [1 ]
机构
[1] Anvik Corp, Hawthorne, NY 10532 USA
关键词
displays; large-area exposure; lithography systems; microelectromechanical systems; microelectronics; optoelectronics; photoablation; projection imaging; seamless scanning;
D O I
10.1109/JPROC.2002.803662
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An important requirement in the production of numerous microelectronic, optoelectronic, and microsystem devices is lithographic patterning on a large area with high image resolution and precise layer-to-layer alignment. Whereas for production of semiconductor devices advances have been steadily made in steppers and other conventional lithography systems, the lithography requirements for the fabrication of large-format products, such as displays, multi-layer circuits, and flexible electronics, are distinctly different, rendering various conventional lithography tools inadequate. These requirements and distinctions of large-area lithography are discussed. In the last several years, we have developed a new class of projection lithography systems that provide both high-resolution imaging and very large exposure area capability with high-precision alignment. The systems, using excimer laser sources, function as dual-mode, high-throughput production tools, capable of patterning in photoresists as well as photoablation in polymers, making them attractive for production of numerous large-format products, with feature sizes ranging from 15 mum to below 1 mum and substrate sizes ranging from 150 x 150 mm to 610 x 915 mm. We review the new lithography system technology, several completed systems, and demonstrated results.
引用
收藏
页码:1681 / 1688
页数:8
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