High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm

被引：1723

作者：

Gong, Xiong ^{[1
,2
]}

Tong, Minghong ^{[1
]}

Xia, Yangjun ^{[3
]}

Cai, Wanzhu ^{[3
]}

Moon, Ji Sun ^{[1
]}

Cao, Yong ^{[3
]}

Yu, Gang ^{[2
]}

Shieh, Chan-Long ^{[2
]}

Nilsson, Boo ^{[2
]}

Heeger, Alan J. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA

[2] CBrite Inc, Goleta, CA 93117 USA

[3] S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China

来源：

SCIENCE | 2009年 / 325卷 / 5948期

基金：

美国国家科学基金会;

关键词：

QUANTUM; COPOLYMERS; TRANSPORT; ENERGIES; DONOR; CELLS;

D O I：

10.1126/science.1176706

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Today, gallium nitride-, silicon-, and indium gallium arsenide-based detectors are used for different sub-bands within the ultraviolet to near-infrared wavelength range. We demonstrate polymer photodetectors with broad spectral response (300 to 1450 nanometers) fabricated by using a small-band-gap semiconducting polymer blended with a fullerene derivative. Operating at room temperature, the polymer photodetectors exhibit detectivities greater than 10(12) cm Hz(1/2)/W and a linear dynamic range over 100 decibels. The self-assembled nanomorphology and device architecture result in high photodetectivity over this wide spectral range and reduce the dark current (and noise) to values well below dark currents obtained in narrow-band photodetectors made with inorganic semiconductors.

引用

页码：1665 / 1667

页数：3

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