Dielectric properties, leakage behaviour, and resistance degradation of thin films of the solid solution series Ba(Ti1-yZry)O-3

Barium titanate zirconate thin films were grown on Pt-coated Si-substrates by a chemical solution deposition (CSD) method at temperatures of 750 degrees C. The crystal structure and the morphology of these films with respect to the Ti/Zr ratio were studied by means of glancing incidence X-ray diffraction analysis, scanning and transmission electron microscopy. The dielectric properties were analyzed as a function of the composition and the applied electric field. Using transient impedance analysis, the dielectric relaxation, leakage, and resistance degradation of the thin films were investigated with respect to the Ti/Zr ratio. The measurements show that thin films of the composition Ba(Ti0.7Zr0.3)O-3 exhibit an improved DRAM charge storage behaviour compared to the pure BaTiO3 films.