Cu(In1-x, Gax)Se2-based thin film solar cells using transparent conducting back contacts

被引：44

作者：

Nakada, T ^{[1
]}

Hirabayashi, Y ^{[1
]}

Tokado, T ^{[1
]}

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 1578572, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 11A期

关键词：

Cu(In1-x; Ga-x)Se-2; CuGaSe2; thin film solar cells; tandem solar cells; SnO2; ITO; TCO back contacts;

D O I：

10.1143/JJAP.41.L1209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu(In1-x, Ga-x)Se-2 (CIGS)-based thin film solar cells have been fabricated using a transparent conducting oxide (TCO) back contact. The cell performance of CIGS devices using tin oxide (SnO2) and indium tin oxide (ITO) back contacts was almost the same as that of a conventional CIGS solar cell fabricated using Mo back metal electrodes. The CIGS/TCO contacts showed ohmic behavior at room temperature. The optical transmission of the CGS solar cell rises at 740 nm, which corresponds to the band-gap energy of the CGS absorber layer, resulting in a semitransparent behavior in red wavelength regions. These results suggest that this type of CIGS-based solar cell has potential for use in CIGS-based tandem solar cells and other applications.

引用

页码：L1209 / L1211

页数：3

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