Clipped Random Wave Morphologies and the Analysis of the SAXS of an Ionomer Formed by Copolymerization of Tetrafluoroethylene and CF2=CFO(CF2)4SO3H

被引：21

作者：

Aieta, Niccolo V. ^{[1
]}

Stanis, Ronald J. ^{[1
]}

Horan, James L. ^{[1
]}

Yandrasits, Michael A. ^{[2
]}

Cookson, David. J. ^{[3
]}

Ingham, Bridget ^{[5
]}

Toney, Michael F. ^{[4
]}

Hamrock, Steven J. ^{[2
]}

Herring, Andrew M. ^{[1
]}

机构：

[1] Colorado Sch Mines, Dept Chem Engn, Golden, CO 80401 USA

[2] 3M Co, Fuel Cell Components Program 3M, St Paul, MN 55144 USA

[3] Australian Synchrotron, Clayton, Vic 3168, Australia

[4] Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA

[5] Ind Res Ltd, Lower Hutt, New Zealand

来源：

MACROMOLECULES | 2009年 / 42卷 / 15期

基金：

美国国家科学基金会;

关键词：

SMALL-ANGLE SCATTERING; PROTON-EXCHANGE MEMBRANES; HYDRATED MORPHOLOGIES; TRANSPORT; NAFION; SWOLLEN; SORPTION;

D O I：

10.1021/ma900719a

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Using SAXS data, the microstructure of the ionomer formed by copolymerization of tetrafluoroethylene and CF2=CFO(CF2)(4)SO3H films has been approached by two methods: a numerical method (the unified fit approach) utilizing a simple model of spherical scattering objects to determine the radius of gyration of different scattering features of the ionomer films and by a graphical method, the clipped random wave approach (CRW), using the scattering data and a porosity parameter to generate a random wave which is clipped to produce a real-space image of the microstructure. We studied films with EW of 733, 825, 900,and 1082 in both the as-cast and annealed "dry" and boiled "wet" states. The results of the two data analysis techniques are in good size agreement with each other. In addition, the CRW model show striking similarities to the structure proposed in a recent dissipative particle dynamic models. This has been the first time to our knowledge that the CRW technique has been applied to a PFSA type ionomer.

引用

页码：5774 / 5780

页数：7

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