1.55-μm range InAs-InP (100) quantum-dot Fabry-Perot and ring lasers using narrow deeply etched ridge waveguides

被引：22

作者：

Barbarin, Y. ^{[1
]}

Anantathanasarn, S. ^{[1
]}

Bente, E. A. J. M. ^{[1
]}

Oei, Y. S. ^{[1
]}

Smit, M. K. ^{[1
]}

Notzel, R. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA, NL-5600 MB Eindhoven, Netherlands

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 21-24期

关键词：

integrated optics; quantum dots (QDs); ring lasers; semiconductor lasers; waveguide bends;

D O I：

10.1109/LPT.2006.887382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on the fabrication and characterization of InAs-InP (100) quantum-dot (QD) Fabry-Perot and ring lasers, lasing in the 1.55-mu m wavelength range and employing narrow deeply etched ridge waveguides (1,65 mu m width). The performance of the lasers appears not affected by sidewall recombination effects of the deeply etched waveguide structure. Narrow deeply etched ridge waveguides can be mono-mode and allow for a small bending radius to realize compact integrated devices. As a demonstration, we present results on a compact ring laser with a free spectral range close to 40 GHz. Due to the low absorption of the QDs, unpumped output waveguides can be used.

引用

页码：2644 / 2646

页数：3

共 11 条

[1] Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy [J].

Anantathanasarn, S. ;

Notzel, R. ;

van Veldhoven, P. J. ;

van Otten, F. W. M. ;

Barbarin, Y. ;

Servanton, G. ;

de Vries, T. ;

Smalbrugge, E. ;

Geluk, E. J. ;

Eijkemans, T. J. ;

Bente, E. A. J. M. ;

Oei, Y. S. ;

Smit, M. K. ;

Wolter, J. H. .

APPLIED PHYSICS LETTERS, 2006, 89 (07)

[2]

ANANTATHANASARN S, 2006, APPL PHYS LETT, V88

[3]

BENTE EAJ, 2006, P PHOT W 2006 INT OP, V6124, P21

[4] Highly unidirectional InAs/InGaAs/GaAs quantum-dot ring lasers [J].

Cao, HJ ;

Deng, H ;

Ling, H ;

Liu, CY ;

Smagley, VA ;

Caldwell, RB ;

Smolyakov, GA ;

Gray, AL ;

Lester, LF ;

Eliseev, PG ;

Osinski, M .

APPLIED PHYSICS LETTERS, 2005, 86 (20) :1-3

[5] Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching [J].

Griffel, G ;

Abeles, JH ;

Menna, RJ ;

Braun, AM ;

Connolly, JC ;

King, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (02) :146-148

[6] Direct modulation and mode locking of 1.3 mm quantum dot lasers -: art. no. 181 [J].

Kuntz, M ;

Fiol, G ;

Lämmlin, M ;

Bimberg, D ;

Thompson, MG ;

Tan, KT ;

Marinelli, C ;

Wonfor, A ;

Sellin, R ;

Penty, RV ;

White, IH ;

Ustinov, VM ;

Zhukov, AE ;

Shernyakov, YM ;

Kovsh, AR ;

Ledentsov, NN ;

Schubert, C ;

Marembert, V .

NEW JOURNAL OF PHYSICS, 2004, 6 :1-11

[7] Optical spectroscopy of self-organized nanoscale heterostructures involving high-index surfaces [J].

Ledentsov, NN ;

Maximov, MV ;

Kopev, PS ;

Ustinov, VM ;

Belousov, MV ;

Meltser, BY ;

Ivanov, SV ;

Shchukin, VA ;

Alferov, ZL ;

Grundmann, M ;

Bimberg, D ;

Ruvimov, SS ;

Richter, W ;

Werner, P ;

Gosele, U ;

Heidenreich, J ;

Wang, PD ;

Torres, CMS .

MICROELECTRONICS JOURNAL, 1995, 26 (08) :871-879

[8] High-power 1.5 μm InAs-InGaAs quantum dot lasers on GaAs substrates [J].

Maksimov, MV ;

Shernyakov, YM ;

Kryzhanovskaya, NV ;

Gladyshev, AG ;

Musikhin, YG ;

Ledentsov, NN ;

Zhukov, AE ;

Vasil'ev, AP ;

Kovsh, AR ;

Mikhrin, SS ;

Semenova, ES ;

Maleev, NA ;

Nikitina, EV ;

Ustinov, VM ;

Alferov, ZI .

SEMICONDUCTORS, 2004, 38 (06) :732-735

[9]

MOORE SA, 2006, IEEE PHOTONIC TECH L, V18, P161

[10] High performance narrow stripe quantum-dot lasers with etched waveguide [J].

Ouyang, D ;

Ledentsov, NN ;

Bimberg, D ;

Kovsh, AR ;

Zhukov, AE ;

Mikhrin, SS ;

Ustinov, VM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (12) :L53-L54

← 1 2 →