Epitaxial growth and spectroscopic investigation of BaSO4:: Mn6+ layers

被引：12

作者：

Ehrentraut, D ^{[1
]}

Pollnau, M

Kück, S

机构：

[1] Swiss Fed Inst Technol, Sch Engn, Inst Appl Opts, CH-1015 Lausanne, Switzerland

[2] Univ Hamburg, Inst Laser Phys, D-20355 Hamburg, Germany

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2002年 / 75卷 / 01期

关键词：

D O I：

10.1007/s00340-002-0953-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the first layer growth of a Mn6+-doped material. Large-size BaSO4 substrates of 10 x 6 x 4 mm(3) wef e grown from a LiCl solvent by the flux method. Flat surfaces of undoped BaSO4 were then achieved by use of liquid-phase epitaxy (LPE) from a CsCl-KCI-NaCl solvent. Finally, BaSO4: Mn6+ layers were grown by LPE with growth velocities of approximately 3 Rmh-1, at temperatures of 550-508 degreesC. Absorption, luminescence, luminescence-excitation and luminescence-decay measurements confirmed the incorporation of manganese solely in its hexavalent oxidation state. This material possesses potential as a near-infrared tunable laser with a wavelength range larger than Ti: sapphire.

引用

页码：59 / 62

页数：4

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