Monolithic vertical cavity device lasing at 1.55 mu m in InGaAlAs system

被引：12

作者：

Debray, JP

Bouche, N

LeRoux, G

Raj, R

Quillee, M

机构：

[1] France Telecom/CNET/Paris B, 92225 Bagneux

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 10期

关键词：

vertical cavity surface emitting lasers; semiconductor junction lasers;

D O I：

10.1049/el:19970568

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present the first demonstration of a monolithic vertical cavity laser optically pumped at 1.55 mu m. The laser cavity is grown in a single run by low pressure MOVPE and the total thickness is 16.4 mu M with an InGaAlAs (lambda(g)=1.55 mu m) bulk active region (3 lambda/2 thick) between two InGaAlAs (lambda(s)=1.45 mu m)/InAlAs Bragg stacks.

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收藏

页码：868 / 869

页数：2

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