Reading out charge qubits with a Radio-Frequency Single-Electron-Transistor

被引:13
作者
Bladh, K [1 ]
Gunnarsson, D
Johansson, G
Käck, A
Wendin, G
Aassime, A
Taslakov, M
Delsing, P
机构
[1] Chalmers Univ Technol, Dept Microelect & Nanosci, Microtechnol Ctr Chalmers MC2, S-41296 Gothenburg, Sweden
[2] Univ Gothenburg, S-41296 Gothenburg, Sweden
[3] CENS, Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France
[4] Swedish Natl Testing & Res Inst, SE-50115 Boras, Sweden
[5] Bulgarian Acad Sci, Inst Elect, Sofia, Bulgaria
关键词
D O I
10.1238/Physica.Topical.102a00167
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We describe fabrication and measurements of Single Electron Transistors operated in the Radio Frequency mode (RF-SET). We demonstrate very high sensitivity for RF-SETs and we evaluate the back-action from an RF-SET when used as a read-out device for charge qubits. We conclude that single-shot read-out is possible with a signal to noise ratio greater than one, and that niobium qubits would substantially improve the signal to noise ratio. Furthermore we describe how the RF-SET could be used to read out a differential qubit in a gradiometer coupling.
引用
收藏
页码:167 / 172
页数:6
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