Quantum-dot-induced ordering in GaxIn1-xP/InP islands -: art. no. 235308

被引：8

作者：

Håkanson, U ^{[1
]}

Sass, T ^{[1
]}

Johansson, MKJ ^{[1
]}

Pistol, ME ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, SE-22100 Lund, Sweden

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.66.235308

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and low-temperature scanning tunneling luminescence (STL). STM reveals that the overgrowth is highly uneven, in which elongated GaxIn1-xP islands covering the dots are formed. TEM and high-spatial-resolution STL show that the quantum dots locally induce domains with higher degree of ordering in the islands. The luminescence from these domains is observed as a strong GaxIn1-xP peak at an energy below the emission from the GaxIn1-xP barrier material.

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页码：1 / 5

页数：5

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