High hole mobility in Si0.17Ge0.83 channel metal-oxide-semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition

被引：74

作者：

Höck, G ^{[1
]}

Kohn, E

Rosenblad, C

von Känel, H

Herzog, HJ

König, U

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, D-89081 Ulm, Germany

[2] ETH Zurich, Festkorperphys Lab, CH-8093 Zurich, Switzerland

[3] Daimler Chrysler, Res & Technol, D-89081 Ulm, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on effective hole mobility in SiGe-based metal-oxide-semiconductor (MOS) field-effect transistors grown by low-energy plasma-enhanced chemical vapor deposition. The heterostructure layer stack consists of a strained Si0.17Ge0.83 alloy channel on a thick compositionally-graded Si0.52Ge0.48 buffer. Structural assessment was done by high resolution x-ray diffraction. Maximum effective hole mobilities of 760 and 4400 cm(2)/Vs have been measured at 300 and 77 K, respectively. These values exceed the hole mobility in a conventional Si p-MOS device by a factor of 4 and reach the mobility data of conventional Si n-MOS transistors. (C) 2000 American Institute of Physics. [S0003-6951(00)00426-5].

引用

页码：3920 / 3922

页数：3

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