We demonstrate a hybrid inorganic/organic light-emitting device composed of a CdSe/ZnS core/shell semiconductor quantum-dot emissive layer sandwiched between p-type NiO and tris-(8-hydroxyquinoline) aluminum (Alq(3)), as hole and electron transporting layers, respectively. A maximum external electroluminescence quantum efficiency of 0.18% is achieved by tuning the resistivity of the NiO layer to balance the electron and hole densities at quantum-dot sites.
机构:Advanced Technology Center for Photonics and Optoelectronic Materials (ATC/POEM), Department of Electrical Engineering, Princeton University, Princeton, NJ
BURROWS, PE
FORREST, SR
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机构:Advanced Technology Center for Photonics and Optoelectronic Materials (ATC/POEM), Department of Electrical Engineering, Princeton University, Princeton, NJ
机构:Advanced Technology Center for Photonics and Optoelectronic Materials (ATC/POEM), Department of Electrical Engineering, Princeton University, Princeton, NJ
BURROWS, PE
FORREST, SR
论文数: 0引用数: 0
h-index: 0
机构:Advanced Technology Center for Photonics and Optoelectronic Materials (ATC/POEM), Department of Electrical Engineering, Princeton University, Princeton, NJ