Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

被引：182

作者：

Mizuno, T ^{[1
]}

Takagi, S ^{[1
]}

Sugiyama, N ^{[1
]}

Satake, H ^{[1
]}

Kurobe, A ^{[1
]}

Toriumi, A ^{[1
]}

机构：

[1] Toshiba Corp, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 05期

关键词：

buried-oxide; mobility; MOSFET's; strained-Si SiGe; SIMOX;

D O I：

10.1109/55.841305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have newly developed strained-Si MOSFET's on a SiGe-on-insulator (strained-SOI) structure fabricated by separation-by-implanted-oxygen (SIMOX) technology, Their electron and hole mobility characteristics have been experimentally studied and compared to those of control SOI MOSFET's. Using an epitaxial regrowth technique of a strained-Si film on a relaxed-Si0.9Ge0.1 layer and the conventional SIMOX process, strained-Si (20 nm thickness) layer on fully relaxed-SiGe (340 nm thickness)-on-buried oxide (100 nm thickness) was formed, and n-and p-channel strained-Si MOSFET's were successfully fabricated. For the first time, the good FET characteristics were obtained in both n-and p-strained-SOI devices. It was found that both electron and hole mobilities in strained-SOI MOSFET's were enhanced, compared to those of control SOI MOSFET's and the universal mobility in Si inversion layer.

引用

页码：230 / 232

页数：3

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