W-band uni-travelling-carrier photodiode module for high-power photonic millimetre-wave generation

被引:42
作者
Ito, H
Furuta, T
Ito, T
Muramoto, Y
Tsuzuki, K
Yoshino, K
Ishibashi, T
机构
[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan
[2] NTT Elect Corp, Machida, Tokyo 1940004, Japan
关键词
D O I
10.1049/el:20020951
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A uni-travelling-carrier photodiode module with a waveguide output port for operation in the W-band is developed. The module has a configuration equivalent to those of conventional optoelectronic devices, which is essential for higher stability and better manufacturability. The maximum saturation output power obtained from the module is 11 mW at 100 GHz.
引用
收藏
页码:1376 / 1377
页数:2
相关论文
共 7 条
[1]  
Furuta T, 2002, ELECTRON LETT, V38, P332, DOI [10.1049/el:20020213, 10.1049/el:20020237]
[2]   Generation of millimetre and sub-millimetre waves by photomixing in 1.55 μm wavelength photodiode [J].
Huggard, PG ;
Ellison, BN ;
Shen, P ;
Gomes, NJ ;
Davies, PA ;
Shillue, W ;
Vaccari, A ;
Payne, JM .
ELECTRONICS LETTERS, 2002, 38 (07) :327-328
[3]  
ISHIBASHI T, 1997, TECH DIG ULTRAFAST E, P83
[4]   InP/lnGaAs uni-travelling-carrier photodiode with 310GHz bandwidth [J].
Ito, H ;
Furuta, T ;
Kodama, S ;
Ishibashi, T .
ELECTRONICS LETTERS, 2000, 36 (21) :1809-1810
[5]  
ITO H, 2002, IN PRESS IEE P OPTOE, V149
[6]  
NOGUCHI T, 2002, IN PRESS P 13 INT S
[7]  
PAYNE J, 1999, TOP M MICR PHOT MWP, P105