Monoclinic and correlated metal phase in VO2 as evidence of the Mott transition:: Coherent phonon analysis

被引：294

作者：

Kim, Hyun-Tak ^{[1
]}

Lee, Yong Wook

Kim, Bong-Jun

Chae, Byung-Gyu

Yun, Sun Jin

Kang, Kwang-Yong

Han, Kang-Jeon

Yee, Ki-Ju

Lim, Yong-Sik

机构：

[1] ETRI, IT Convergence & Components Res Lab, Taejon 305350, South Korea

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[3] Konkuk Univ, Dept Appl Phys, Chungbuk 380701, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.97.266401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 and 6.0 THz indicating the rutile metal phase of VO2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68 degrees C. The monoclinic and correlated metal (MCM) phase between the MIT and the structural phase transition (SPT) is generated by a photoassisted hole excitation, which is evidence of the Mott transition. The SPT between the MCM phase and the rutile metal phase occurs due to subsequent Joule heating. The MCM phase can be regarded as an intermediate nonequilibrium state.

引用

页数：4

共 32 条

[1]

BASOV DN, COMMUNICATION, P35418

[2] Dynamical singlets and correlation-assisted peierls transition in VO2 -: art. no. 026404 [J].

Biermann, S ;

Poteryaev, A ;

Lichtenstein, AI ;

Georges, A .

PHYSICAL REVIEW LETTERS, 2005, 94 (02) :1-4

[3] Application of Gutzwiller's variational method to the metal-insulator transition [J].

Brinkman, W. F. ;

Rice, T. M. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4302-4304

[4] Evidence for a structurally-driven insulator-to-metal transition in VO2:: A view from the ultrafast timescale -: art. no. 161102 [J].

Cavalleri, A ;

Dekorsy, T ;

Chong, HHW ;

Kieffer, JC ;

Schoenlein, RW .

PHYSICAL REVIEW B, 2004, 70 (16) :1-4

[5] Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition -: art. no. 237401 [J].

Cavalleri, A ;

Tóth, C ;

Siders, CW ;

Squier, JA ;

Ráksi, F ;

Forget, P ;

Kieffer, JC .

PHYSICAL REVIEW LETTERS, 2001, 87 (23) :237401-1

[6] Highly oriented VO2 thin films prepared by sol-gel deposition [J].

Chae, BG ;

Kim, HT ;

Yun, SJ ;

Kim, BJ ;

Lee, YW ;

Youn, DH ;

Kang, KY .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (01) :C12-C14

[7] Mid-infrared properties of a VO2 film near the metal-insulator transition [J].

Choi, HS ;

Ahn, JS ;

Jung, JH ;

Noh, TW ;

Kim, DH .

PHYSICAL REVIEW B, 1996, 54 (07) :4621-4628

[8]

Dekorsy T, 2000, TOP APPL PHYS, V76, P169

[9]

GOODENOUGH JB, 1972, J SOLID STATE CHEM, V5, P144, DOI 10.1016/0022-4596(72)90022-9

[10] Orbital-assisted metal-insulator transition in VO2 -: art. no. 196404 [J].

Haverkort, MW ;

Hu, Z ;

Tanaka, A ;

Reichelt, W ;

Streltsov, SV ;

Korotin, MA ;

Anisimov, VI ;

Hsieh, HH ;

Lin, HJ ;

Chen, CT ;

Khomskii, DI ;

Tjeng, LH .

PHYSICAL REVIEW LETTERS, 2005, 95 (19)

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