An accurate relationship for determining the key parameters of MOSFETs by proportional difference operator method

被引：2

作者：

Wang, JY ^{[1
]}

Xu, MZ ^{[1
]}

Tan, CH ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 06期

关键词：

proportional difference operator; saturation characterization; peak drain voltage;

D O I：

10.1016/S0038-1101(00)00014-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An improved version of the proportional difference operator method is presented for the determination of key parameters of a MOSFET, including threshold voltage and carrier mobility, and results in the proportional difference output characteristics of a MOSFET, which manifests spectral property. The accurate relationship between key parameters and the peak of the proportional difference output characteristic is provided. Subsequently, a simple discussion of the practical application of this method under different bias conditions, i.e. substrate biases, is also given. Further, some approximate equations with enough accuracy are provided to simplify the calculation complexity. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：959 / 962

页数：4

共 4 条

[1]

Schroder D.K., 1990, SEMICONDUCTOR MAT DE

[2]

SZE M, 1981, PHYS SEMICONDUCTOR D, pCH7

[3] Proportional difference operator method and its application to studying the saturation characteristics of MOSFETs [J].

Tan, CH ;

Xu, MZ ;

Wang, JY ;

Xie, B ;

He, YD .

ELECTRONICS LETTERS, 1998, 34 (21) :2067-2069

[4] A SPECTRAL-ANALYSIS METHOD TO DIRECTLY DETERMINE MINORITY-CARRIER GENERATION LIFETIME USING THE PULSED MOS STRUCTURE [J].

XU, MZ ;

TAN, CH ;

HE, YD ;

WANG, YY .

SOLID-STATE ELECTRONICS, 1994, 37 (01) :31-36

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