Modified spontaneous-emission rate in an inverted-opal structure with complete photonic bandgap

被引:47
作者
Hermann, C
Hess, O
机构
[1] Deutsch Zentrum Luft & Raumfahrt, Inst Tech Phys, D-70569 Stuttgart, Germany
[2] Tampere Univ Technol, Inst Phys, FIN-33101 Tampere, Finland
关键词
D O I
10.1364/JOSAB.19.003013
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A finite three-dimensional photonic-crystal structure with a complete photonic bandgap is shown to drastically modify the spontaneous-emission rate of an embedded dipole. Calculations on the basis of the finite-difference time-domain method with perfectly matched layer boundary conditions demonstrate a strong position and polarization dependence of spontaneous emission within the unit cell. Strong enhancement effects are predicted at interfaces between the high-index and the low-index material. The inhibition of spontaneous emission within the bandgap is of the order of two magnitudes, even for relatively small crystallites. (C) 2002 Optical Society of America.
引用
收藏
页码:3013 / 3018
页数:6
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