Spatial extent of wave functions of gate-induced hole carriers in pentacene field-effect devices as investigated by electron spin resonance

被引：148

作者：

Marumoto, Kazuhiro ^{[1
]}

Kuroda, Shin-ichi

Takenobu, Taishi

Iwasa, Yoshihiro

机构：

[1] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[3] Japan Sci & Technol Corp, CREST, Kawaguchi 3320012, Japan

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.97.256603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to unpaired pi electrons show the molecular orientation at the interface in the devices. The spatial extent of the spin density distribution (wave function) of the carriers is evaluated from the ESR linewidth, accounting for the hyperfine structure, to be of the order of 10 molecules.

引用

页数：4

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