Current routes in polycrystalline CuInSe2 and Cu(In,Ga)Se2 films

被引：94

作者：

Azulay, Doron

Millo, Oded ^{[1
]}

Balberg, Isaac

Schock, Hans-Werner

Visoly-Fisher, Iris

Cahen, David

机构：

[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

[2] Hahn Meitner Inst Berlin GmbH, D-1000 Berlin, Germany

[3] Weizmann Inst Sci, Mat & Interfaces Dept, IL-76100 Rehovot, Israel

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2007年 / 91卷 / 01期

基金：

以色列科学基金会;

关键词：

solar cell; grain boundaries; conductive AFM; CIS; CIGS;

D O I：

10.1016/j.solmat.2006.08.006

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Local electrical transport measurements with scanning probe microscopy on polycrystalline (PX) p-CuInSe2 and p-Cu(In,Ga)Se-2 films show that the photovoltaic and dark currents for bias voltages smaller than 1 V flow mainly through grain boundaries (GBs), indicating inversion at the GBs. Photocurrent for higher bias flows mainly via the grains. Based on these results and our finding of similar to 100 meV GB band bending we deduce the potential landscape around the GBs. We suggest that high grain material quality, leading to large carrier mobilities, and electron-hole separation at the GBs, by chemical and electrical potential gradients, result in the high performance of these PX solar cells. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：85 / 90

页数：6

共 31 条

[1] Where does photocurrent flow in polycrystalline CdS? [J].