Experimental determination of induction period and interfacial energies of pure and nitro doped 4-hydroxyacetophenone single crystals

被引:40
作者
Chenthamarai, S
Jayaraman, D
Ushasree, PM
Meera, K
Subramanian, C [1 ]
Ramasamy, P
机构
[1] Univ Madras, Presidency Coll, Chennai 600005, India
[2] Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India
关键词
solution growth technique; 4-hydroxyacetophenone; induction period; interfacial energy; nucleation parameters; NLO property;
D O I
10.1016/S0254-0584(99)00229-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Single crystals of pure and nitro doped 4-hydroxyacetophenone were grown by low temperature solution growth technique. The induction periods were measured at various supersaturations for these materials and hence the interfacial energies were evaluated. The effect of doping of a nitro group in the material enhances the NLO property. The experimentally evaluated values of interfacial energies are found to be in good agreement with theoretically predicated values. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:179 / 183
页数:5
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