Research of high-temperature instability processes in buried dielectric of full depleted SOI MOSFET's

被引：7

作者：

Nazarov, AN

Colinge, JP

Barchuk, IP

机构：

[1] Institute of Semiconductor Physics, NASU, 252028 Kiev-28

[2] Microelectronics Laboratory, Univ.́ Catholique de Louvain, 1348 Louvain-la-Neuve

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00080-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work the processes of thermal-bias charge instability in the buried oxide of SIMOX SOI full depleted inversion mode (IM) n-MOSFET's and accumulation mode (AM) p-MOSFET's are studied. High-temperature kink effect in IM back n-MOSFET is first considered. Observed effects of thermal-bias instability and high-temperature kink effect are explained by thermally activated positive charge transport through buried oxide with following electron injection from the silicon film into the buried oxide.

引用

页码：363 / 366

页数：4