Correlated and non-correlated growth kinetics of pentacene in the sub-monolayer regime

被引:21
作者
Brinkmann, Martin
Pratontep, Sirapat
Contal, Christophe
机构
[1] Inst Charles Sadron, F-67083 Strasbourg, France
[2] NANOTEC, NSTDA, Klongluang 12120, Patumthani, Thailand
关键词
organic semiconductor; thin film growth; organic field effect transistor;
D O I
10.1016/j.susc.2006.07.040
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We present a study of the growth kinetics of pentacene monolayer islands on SiO2 in the submonolayer regime by using Atomic Force Microscopy (AFM). Two distinct growth modes, namely correlated growth (CG) and non-correlated growth (NCG). have been identified by Voronoi tesselation. These two modes are characterized by different island growth kinetics. In the case of correlated growth, the average island size < A > scales with deposition time t i.e. < A > proportional to t whereas for non-correlated growth, < A > proportional to t(2). The CG and NCG regimes are defined by the level of re-evaporation which determines the capture zones around the islands: Wigner-Seitz cells for CG and coronas of width lambda(D) (lambda(D) is the mean diffusion distance on SiO2 before re-evaporation) for NCG. A simple model is proposed to reproduce the experimental growth kinetics in both modes. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:4712 / 4716
页数:5
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