Quantum-size oscillations of the electric field effect (EFE) in thin Bi films

被引：5

作者：

Butenko, AV

Shvarts, D

Sandomirsky, V

Schlesinger, Y ^{[1
]}

机构：

[1] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel

[2] Bar Ilan Univ, Jack & Pearl Resnick Inst Adv Technol, IL-52900 Ramat Gan, Israel

来源：

PHYSICA B | 2000年 / 284卷

关键词：

Bi; conductance; electric field effect; quantum-size state; semimetal;

D O I：

10.1016/S0921-4526(99)03059-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The quantum-size state (QSS) of semimetal Bi films has been studied by electric field effect (EFE), namely, the change of the conductance at the electrical charging of the him. The ratio of the electron and hole density of states g(n)/g(p) has been measured by EFE. The thickness dependence of this ratio exhibits a characteristic oscillation pattern, which is an unique label of QSS. This method allows a rather precise determination of the film thickness period of the oscillations. The result is in excellent agreement with the value derived from the dispersion law of bulk Bi. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1942 / 1943

页数：2

共 6 条

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