Synthesis of vertically aligned carbon nanotubes films on silicon wafers by pyrolysis of ethylenediamine

被引:28
作者
Zhang, WD
Wen, Y
Li, J
Xu, GQ
Gan, LM
机构
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
关键词
carbon nanotubes; chemical vapor deposition; vertical alignment; nickel thin film;
D O I
10.1016/S0040-6090(02)00951-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Well-aligned carbon nanotubes (CNTs) have been grown on nickel-deposited silicon wafers by thermal chemical vapor deposition (CVD) of ethylenediamine precursor. The CNTs are vertically aligned at high density over large areas on the silicon surface. The size and the density of the nanotubes were found to be dependent on the thickness of the Ni film. The length of the nanotube array can be controlled by varying the CVD time. High-resolution transmission electron microscopy analysis revealed that the CNTs present bamboo-like multi-walled structure. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:120 / 125
页数:6
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