Optical investigation of thick 3C-SiC layers deposited on bulk silicon by CVD

被引：4

作者：

Bluet, JM

Camassel, J

Falkovsky, LA

Leycuras, A

机构：

[1] RUSSIAN ACAD SCI,LD LANDAU THEORET PHYS INST,MOSCOW 117334,RUSSIA

[2] CNRS,CTR RECH HETEROEPITAXIE & SES APPLICAT,F-06560 VALBONNE,FRANCE

来源：

关键词：

3C-SiC heteroepitaxy; roughness; epitaxial layer uniformity; strain relaxation;

D O I：

10.1016/S0925-9635(97)00101-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thick (up to 25 mu m) SiC layers deposited on silicon have been probed by micro-Raman spectroscopy and infrared reflectivity measurement. The Raman spectra collected on the edge of the sample show a large strain relaxation when moving from the interface region to the free surface of the sample. The IR reflectivity measurements evidence a finite roughness of the Si/SiC interface and about 10% dispersion in the layer thickness homogeneity. (C) 1997 Elsevier Science S.A.

引用

页码：1385 / 1387

页数：3

共 11 条

[1] RELATION BETWEEN SURFACE ROUGHNESS AND SPECULAR REFLECTANCE AT NORMAL INCIDENCE [J].