Vibrational spectroscopy study of doping induced charged defects in a series of alpha,alpha'-dimethyl end-capped oligothiophenes

被引：7

作者：

Casado, J ^{[1
]}

Ramirez, FJ ^{[1
]}

Hotta, S ^{[1
]}

Navarrete, JTL ^{[1
]}

Hernandez, V ^{[1
]}

机构：

[1] MATSUSHITA RES INST TOKYO INC,ADV MAT RES LAB,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN

来源：

SYNTHETIC METALS | 1997年 / 84卷 / 1-3期

关键词：

infrared and Raman spectroscopy; polythiophene and derivatives; ALKYL-SUBSTITUTED OLIGOTHIOPHENES; RAMAN;

D O I：

10.1016/S0379-6779(96)04055-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present some preliminary results of a vibrational spectroscopic investigation carried out on a series of alpha,alpha'-dimethyl end-capped oligothiophenes doped with iodine. The evolution of the doping-induced infrared bands has been followed by means of in situ FT-IR spectroscopy, by allowing thin films of neutral oligothiophenes to react with dry iodine vapours at different concentrations. FT-Raman spectra recorded on powdered samples of I-2-doped alpha,alpha'-dimethylquinquethiophene indicate the existence of a polaron-type defect.

引用

页码：571 / 572

页数：2

共 7 条

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[4] Conformational disorder and mean conjugation of neutral alpha,alpha'-dimethyl end-capped oligothiophenes in solution: A FT-Raman and FT-infrared spectroscopic study
Hernandez, V
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[5] HERNANDEZ V, IN PRESS J CHEM PHYS
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[J]. JOURNAL OF MATERIALS CHEMISTRY, 1991, 1 (05) : 835 - 842

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