Optical absorption and luminescence properties of wide-band gap amorphous silicon based alloys

被引：41

作者：

Giorgis, F

Mandracci, P

Dal Negro, L

Mazzoleni, C

Pavesi, L

机构：

[1] Politecn Torino, INFM, I-10129 Turin, Italy

[2] Politecn Torino, Dept Phys, I-10129 Turin, Italy

[3] Univ Trent, INFM, I-38050 Trento, Italy

[4] Univ Trent, Dept Phys, I-38050 Trento, Italy

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷

关键词：

D O I：

10.1016/S0022-3093(99)00748-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Optical measurements of hydrogenated amorphous silicon nitride and silicon carbide alloys are performed and analyzed to correlate the absorption and emission properties. We found that for n-Si1-xNx:H (0 < x < 0.52) and a-Si1-xCx:H (0 < x < 0.5) samples the photoluminescence (PL) spectra and the carrier lifetime distributions depend on the localized tail states as measured by photothermal deflection spectroscopy (PDS). These data support the static disorder model. For C-rich alloys (0.5 < x < 1) the radiative properties do not fit the model predictions due to the presence of C clusters. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：588 / 592

页数：5

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