Bistability-mediated carrier recombination at light-induced boron-oxygen complexes in silicon

被引：31

作者：

Du, Mao-Hua ^{[1
]}

Branz, Howard M. ^{[1
]}

Crandall, Richard S. ^{[1
]}

Zhang, S. B. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.97.256602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A first-principles study of the BO2 complex in B-doped Czochralski Si reveals a defect-bistability-mediated carrier recombination mechanism, which contrasts with the standard fixed-level Shockley-Read-Hall model of recombination. An O-2 dimer distant from B causes only weak carrier recombination, which nevertheless drives O-2 diffusion under light to form the BO2 complex. Although BO2 and O-2 produce nearly identical defect levels in the band gap, the recombination at BO2 is substantially faster than at O-2 because the charge state of the latter inhibits the hole capture step of recombination.

引用

页数：4

共 20 条

[1] Degradation of boron-doped Czochralski-grown silicon solar cells [J].