Investigation of sulphur additions on kinetic processes of cubic boron nitride crystallization in the Li-B-N-H system

被引：4

作者：

Gameza, LM ^{[1
]}

Shipilo, VB ^{[1
]}

Savchuk, VA ^{[1
]}

机构：

[1] Byelarussian Acad Sci, Inst Solid State & Semicond Phys, Minsk 220726, BELARUS

来源：

关键词：

cubic born nitride; crystal growth; doping n-type;

D O I：

10.1016/S0925-9635(97)00157-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the effect of sulphur additions on the kinetics of the degree: and rate of hexagonal to cubic BN conversion (hBN-->cBN) as well as on the linear rate of the cBN crystal growth in the Li-B-N-H system. Experiments were performed in the temperature range 1940-2080 K at a pressure of 4.3 GPa. For 0.5, 1.0 and 3.0 mass.% sulphur addition-the activation energy of the process of cBN formation is found to be 44.0, 38.0 and 34.0 kJ/mol, respectively. The resulting crystals showed n-type conduction with a resistivity of 10(4)-10(8) Omega cm and a dislocation density of 10(5)-10(3)/cm(2).. (C) 1998 Elsevier Science S.A.

引用

页码：32 / 34

页数：3

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