共 2 条
[1]
INUMIYA S, 2005, IEDM
[2]
RAGNARSSON LA, 2005, VLSI 2005
Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 "high k" and 2 metal deposition techniques
被引：10
作者：
Cosnier, V.
Besson, P.
Loup, V.
Vandroux, L.
Minoret, S.
Casse, M.
Garros, X.
Pedini, J. M.
Lhostis, S.
Dabertrand, K.
Morin, C.
Wiemer, C.
Perego, M.
Fanciulli, M.
机构：
[1] STMicroelectronics, F-38926 Crolles, France
[2] CEA, LETI, F-38054 Grenoble 09, France
[3] CNR, INFM, Lab MDM, I-20041 Agrate Brianza, Italy
关键词：
HfO2;
TiN;
interface;
stability;
D O I：
10.1016/j.mee.2007.04.041
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
In this work we evaluate the impact of the gate stack layers deposition technologies and their combination on the thermal stability of the stack with respect to EOT vs leakage figure of merit. Two HfO2 deposition technologies have been used: ALCVD and AVD (for Atomic Vapor Deposition); and two TiN deposition technologies have been evaluated: CVD and PVD. As a result, it appears that stack stability after a 1050 degrees C spike anneal can be achieved by combination of AVD HfO2 and PVD TiN. Anyway a trade-off in terms of mobility degradation using this metallic layer deposition technique is still present.
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页码：1886 / 1889
页数：4
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