Characterization of a highly photorefractive RF-sputtered SiO2-GeO2 waveguide

被引:33
作者
Sebastiani, S
Conti, GN
Pelli, S
Righini, GC
Chiasera, A
Ferrari, M
Tosello, C
机构
[1] CNR, IFAC, Nello Carrara Inst Appl Phys, Optoelect & Photon Dept, I-50127 Florence, Italy
[2] CNR, IFN, Inst Photon & Nanotechnol, Trento Sect, I-38050 Trento, Italy
[3] Univ Trent, Dept Phys, I-38050 Trento, Italy
来源
OPTICS EXPRESS | 2005年 / 13卷 / 05期
关键词
D O I
10.1364/OPEX.13.001696
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present the characterization of highly photorefractive Er3+/Yb3+-doped 75SiO(2)-25GeO(2) planar waveguides, single mode at 1550 nm, deposited by radio-frequency-magnetron-sputtering (RFMS) technique. Details of the deposition process are reported. The material presents an intense absorption band ( alpha approximate to 10(3) divided by 10(4) cm(-1)) in the UV region. Irradiations by a KrF excimer laser source at lambda= 248 nm have produced large positive ( up to 3 . 10(-3)) refractive index changes, without the need of particular sensitization procedures. Direct measurements of UV photo-induced volume densification demonstrates that glass compaction accounts for large part of the refractive index change. Highly efficient photo- induced phase gratings have thus been fabricated in the waveguide. (C) 2005 Optical Society of America.
引用
收藏
页码:1696 / 1701
页数:6
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