Size dependence of lifetime and absorption cross section of Si nanocrystals embedded in SiO2

被引:146
作者
Garcia, C
Garrido, B
Pellegrino, P
Ferre, R
Moreno, JA
Morante, JR
Pavesi, L
Cazzanelli, M
机构
[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain
[2] Univ Trent, Dipartimento Fis, INFM, I-38050 Trent, Italy
关键词
D O I
10.1063/1.1558894
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence lifetimes and optical absorption cross sections of Si nanocrystals embedded in SiO2 have been studied as a function of their average size and emission energy. The lifetimes span from 20 mus for the smallest sizes (2.5 nm) to more than 200 mus for the largest ones (7 nm). The passivation of nonradiative interface states by hydrogenation increases the lifetime for a given size. In contrast with porous Si, the cross section per nanocrystal shows a nonmonotonic behavior with emission energy. In fact, although the density of states above the gap increases for larger nanocrystals, this trend is compensated by a stronger reduction of the oscillator strength, providing an overall reduction of the absorption cross section per nanocrystal for increasing size. (C) 2003 American Institute of Physics.
引用
收藏
页码:1595 / 1597
页数:3
相关论文
共 11 条
[1]   Size-dependent electron-hole exchange interaction in Si nanocrystals [J].
Brongersma, ML ;
Kik, PG ;
Polman, A ;
Min, KS ;
Atwater, HA .
APPLIED PHYSICS LETTERS, 2000, 76 (03) :351-353
[2]   THEORETICAL ASPECTS OF THE LUMINESCENCE OF POROUS SILICON [J].
DELERUE, C ;
ALLAN, G ;
LANNOO, M .
PHYSICAL REVIEW B, 1993, 48 (15) :11024-11036
[3]  
Garrido B., 2002, J APPL PHYS, V91, P798
[4]  
IWAYAMA TS, 1994, J APPL PHYS, V75, P7779
[5]   Phonon structures and Stokes shift in resonantly excited luminescence of silicon nanocrystals [J].
Kanemitsu, Y ;
Okamoto, S .
PHYSICAL REVIEW B, 1998, 58 (15) :9652-9655
[6]   Exciton-erbium interactions in Si nanocrystal-doped SiO2 [J].
Kik, PG ;
Polman, A .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1992-1998
[7]   Optical absorption cross sections of Si nanocrystals [J].
Kovalev, D ;
Diener, J ;
Heckler, H ;
Polisski, G ;
Künzner, N ;
Koch, F .
PHYSICAL REVIEW B, 2000, 61 (07) :4485-4487
[8]   Elucidation of the surface passivation role on the photoluminescence emission yield of silicon nanocrystals embedded in SiO2 [J].
López, M ;
Garrido, B ;
García, C ;
Pellegrino, P ;
Pérez-Rodríguez, A ;
Morante, JR ;
Bonafos, C ;
Carrada, M ;
Claverie, A .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1637-1639
[9]   Optical gain in silicon nanocrystals [J].
Pavesi, L ;
Dal Negro, L ;
Mazzoleni, C ;
Franzò, G ;
Priolo, F .
NATURE, 2000, 408 (6811) :440-444
[10]   Role of the energy transfer in the optical properties of undoped and Er-doped interacting Si nanocrystals [J].
Priolo, F ;
Franzò, G ;
Pacifici, D ;
Vinciguerra, V ;
Iacona, F ;
Irrera, A .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) :264-272