In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire

被引:17
作者
Siah, F
Yang, Z
Tang, ZK
Wong, GKL
Kawasaki, M
Ohtomo, A
Koinuma, H
Segawa, Y
机构
[1] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Adv Mat Res Inst, Kowloon, Hong Kong, Peoples R China
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 227, Japan
[4] Inst Phys & Chem Res, RIKEN, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 980, Japan
关键词
D O I
10.1063/1.1287527
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have found that ZnO films consisting of epitaxially ordered arrays of closely packed hexagonal microcrystallites grown on vicinal (1000) sapphire exhibit biaxial in-plane optical anisotropy. The optical anisotropy resonance occurs near the band gap energy of ZnO. The line shape of the resonance is consistent with that induced by an in-plane anisotropic strain. The direction of the anisotropy coincides with the projection of the miscut direction of the (0001) sapphire substrates onto the sample surface plane. The magnitude of the anisotropy is generally larger for films with high crystalline quality, and on substrates with larger miscut angles. A possible origin of the strain anisotropy due to the miscut angle and the difference in thermal expansion rate of sapphire along its c and a axes is proposed. (C) 2000 American Institute of Physics. [S0021-8979(00)06217-4].
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页码:2480 / 2483
页数:4
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