Opto-electronic properties of rutile SnO2 and orthorhombic SnS and SnSe compounds

被引:76
作者
Nabi, Z [1 ]
Kellou, A
Méçabih, S
Khalfi, A
Benosman, N
机构
[1] Univ Djilalli Liabies, Ctr Res Univ, Dept Phys, Computat Mat Sci Lab, Sidi Bel Abbes 22000, Algeria
[2] Univ Djilalli Liabes, Lab Mat 89, Sidi Bel Abbes 22000, Algeria
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 98卷 / 02期
关键词
local density approximation; dielectric tensor; chalcogenide;
D O I
10.1016/S0921-5107(02)00386-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present self-consistent calculations for the electronic and optical properties of tin dioxide, SnO2, in the rutile structure and SnS and SnSe in their orthorhombic structures. The calculations were performed within the local density approximation (LDA) using the full potential linearized augmented plane wave method (FP-LAPW). We determined the calculated electronic band structure, as well as the density of states which are in good agreement with experiments and other calculations. Furthermore, the dielectric tensor and the absorption coefficient are calculated and compared with the available measurements. For SnO2, the calculated absorption coefficient is in good agreement with the experimental data. For SnS and SnSe compounds, no optical data are available for comparison. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:104 / 115
页数:12
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