A 6-W Ka-band power module using MMIC power amplifiers

被引：14

作者：

Ingram, DL ^{[1
]}

Stones, DI ^{[1
]}

Elliott, JH ^{[1
]}

Wang, H ^{[1
]}

Lai, R ^{[1
]}

Biedenbender, M ^{[1
]}

机构：

[1] TRW Co Inc, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1997年 / 45卷 / 12期

关键词：

millimeter wave transmitters; MMIC power amplifiers; MMIC transmitters; power dividers/combiners;

D O I：

10.1109/22.643855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the development of a 6-W 24% power-added efficiency (PAE) K a-band power module with an associated power gain of 21.5 dB, The power module consists of a driver amplifier and tno power amplifier chips, These monolithic millimeter-wave integrated (MMIC) amplifiers were fabricated with a 2-mil-thick substrate using 0.15-mu m InGaAs/AlGaAs/GaAs high electron mobility transistor (HEMT) technology, The driver amplifier is a fully matched single-ended design with an output power of 27.5 dBm, a 10.7-dB power gain and 27% PAE. We use a hybrid approach for the output power amplifier, which consists of two partially matched MMIC chips and an eight-way Wilkinson combiner fabricated on Alumina substrate. The MMIC power amplifiers delivered a record power of 35.4 dBm (3.5 W) with a PAE of 28% and an associated power gain of 11.5 dB, The eight-way combiner has an insertion loss of 0.6 dB.

引用

页码：2424 / 2430

页数：7

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