Electronic Structure and Charge-Transport Properties of N,N′-Bis(cyclohexyl)naphthalene Diimide

被引:25
作者
Adiga, Shashishekar P. [1 ]
Shukla, Deepak [1 ]
机构
[1] Eastman Kodak Co, Kodak Res Labs, Rochester, NY 14650 USA
关键词
DIFFERENTIAL-OVERLAP TECHNIQUE; DENSITY-FUNCTIONAL THEORY; INTERMEDIATE NEGLECT; NAPHTHALENE; SEMICONDUCTORS; SPECTROSCOPY; TRANSITION; MOBILITIES;
D O I
10.1021/jp9096937
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The charge-transport properties of N,N'-bis(cyclohexyl)naphthalene diimide (NDI-CHEX) crystals are explored via quantum chemical calculations. Electronic coupling elements in different dimer configurations taken from the crystal are calculated by use of density functional theory. Electron transport bandwidths are derived from one-dimensional molecular stacks along key crystallographic directions. The results indicate that charge transport is confined to (001) planes, which are also the preferred thin-film deposition planes. The calculations also reveal that the most preferred pathway for electron transport is the family of < 110 > directions.
引用
收藏
页码:2751 / 2755
页数:5
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