Pentacene thin film transistors and inverter circuits
被引:7
作者:
Klauk, H
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机构:
Penn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA
Klauk, H
[1
]
Lin, YY
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机构:
Penn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA
Lin, YY
[1
]
Gundlach, DJ
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机构:
Penn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA
Gundlach, DJ
[1
]
Jackson, TN
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机构:
Penn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USAPenn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA
Jackson, TN
[1
]
机构:
[1] Penn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA
来源:
INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST
|
1997年
关键词:
D O I:
10.1109/IEDM.1997.650442
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Organic thin film transistors and simple electronic circuits have been fabricated using the fused-ring small-molecule aromatic hydrocarbon pentacene as the active material. Carrier field-effect mobilities greater than 0.2 cm(2)/V-s were obtained for pentacene thin film transistors fabricated on glass substrates using low-temperature ion-beam deposited silicon dioxide as the gate dielectric and thermally evaporated pentacene as the active material. Using similar transistors, integrated voltage inverters with voltage gain large enough to be useful for the fabrication of electronic circuits have been fabricated.