Low resistive ultra shallow junction for sub 0.1 mu m MOSFETs formed by Sb implantation

被引：21

作者：

Shibahara, K

Mifuji, M

Kawabata, K

Kugimiya, T

Furumoto, H

Tsuno, M

Yokoyama, S

Nagata, M

Miyazaki, S

Hirose, M

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.554050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nineteen-nm depth ultra shallow and 1.7 k Omega/sq. low resistive junctions were fabricated by Sb implantation. The shallowness of the junction is attributed to the low diffusive nature of Sb. The junction was applied to 0.15 mu m MOSFETs, and excellent suppression of short channel effect and G(m) improvement were confirmed.

引用

页码：579 / 582

页数：4