Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

被引：29

作者：

Punchaipetch, P ^{[1
]}

Pant, G ^{[1
]}

Quevedo-Lopez, M ^{[1
]}

Zhang, H ^{[1
]}

El-Bouanani, M ^{[1
]}

Kim, MJ ^{[1
]}

Wallace, RM ^{[1
]}

Gnade, BE ^{[1
]}

机构：

[1] Univ N Texas, Dept Mat Sci, Denton, TX 76203 USA

来源：

THIN SOLID FILMS | 2003年 / 425卷 / 1-2期

关键词：

dielectrics; hafnium; oxidation; X-ray photoelectron spectroscopy (XPS);

D O I：

10.1016/S0040-6090(02)01306-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (100) Si. The film was then exposed to UV radiation while in an O-2 ambient. Hafnium silicate films are obtained with no detectable SiOx interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：68 / 71

页数：4

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