Auger-type nonradiative recombination processes in bulk and in quantum well structures of II-VI semiconductors containing transition metal ions

被引：2

作者：

Godlewski, M

Surma, M

Zakrzewski, AJ

Wojtowicz, T

Karczewski, G

Kossut, J

Bergman, JP

Monemar, B

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

Auger process; photoluminescence; nonradiative recombination; transition metal ions;

D O I：

10.4028/www.scientific.net/MSF.258-263.1677

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two new Auger-type processes, related to transition metal impurities in II-VI compounds, are identified from the studies of photoluminescence and magnetic resonance spectroscopy of doped bulk ZnSe crystals and CdTe-based quantum well structures containing chromium. It is shown, that for bulk ZnSe crystals the two-center Auger process enhances capture rates of free electrons by iron Fe3+ ions. For quantum well structures containing chromium excitonic Auger effect is a dominant mechanism of nonradiative recombination.

引用

页码：1677 / 1682

页数：6

共 6 条

[1] EFFECTIVE DEACTIVATION OF THE ZNS VISIBLE PHOTOLUMINESCENCE BY IRON IMPURITIES [J].

GODLEWSKI, M ;

SKOWRONSKI, M .

PHYSICAL REVIEW B, 1985, 32 (06) :4007-4013

[2] ON THE APPLICATION OF THE PHOTO-EPR TECHNIQUE TO THE STUDIES OF PHOTOIONIZATION, DAP RECOMBINATION, AND NON-RADIATIVE RECOMBINATION PROCESSES [J].

GODLEWSKI, M .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 90 (01) :11-52

[3]

GODLEWSKI M, IN PRESS SEMICOND SC

[4]

GODLEWSKI M, 1995, J APPL SPECTROSC, V62, P72

[5] INFLUENCE OF ENERGY TRANSFER BY EXCHANGE MECHANISM ON DONOR LUMINESCENCE [J].

INOKUTI, M ;

HIRAYAMA, F .

JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (06) :1978-&

[6]

TABEI M, 1976, JPN J APPL PHYS, V14, P240

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